VTP3410LAH - Si PD, T1 Lensed IRT, 0.684mm2
The VTP3410LAH is is a silicon photodiode in a visible blocking end-looking long T1 lensed package with an enhanced response in the near IR spectral range. This photodiode exhibits a very high shunt resistance, low dark current and low capacitance.
This fast response silicon photodiode provides a 0.684 mm2 active area and is designed for a spectral response between 700 nm and 1150 nm.
This series of photodiodes is designed for low-junction capacitance to achieve fast response times and can be operated under reverse bias to decrease the capacitance in order to further increase the speed of response. They can also be operated in photovoltaic mode in applications where speed of response is not critical.Â
These photodiodes have excellent response in the near IR spectral range and are well matched to the Excelitas Infrared LED VTE Series.
Features & Benefits:
- Near IR spectral range
- 1 to 2% linearity over 7 to 9 decades
- Low dark current
- High shunt resistance
- Low capacitance
- Fast response
- High reverse voltage rating
- RoHs compliant
Applications:
- Smoke detection
- Barcode scanning
- Light meters
- Pulse oximeters
Active area = 0.684 mm2 active area
Short Circuit Current = Minimum 15 µA at 100 fc, 2850 K
Responsivity = Typical 0.013 A/(W/cm2), 940 nm
Dark Current = Maximum 35 nA at 50 V Reverse Bias
Junction Capacitance = Maximum 25 pF at 3 V Reverse Bias
Spectral Range = 700 nm to 1150 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W
Angular Response = ±20 Degrees at 50 % Response
Active area = 0.684 mm2 active area
Short Circuit Current = Minimum 15 µA at 100 fc, 2850 K
Responsivity = Typical 0.013 A/(W/cm2), 940 nm
Dark Current = Maximum 35 nA at 50 V Reverse Bias
Junction Capacitance = Maximum 25 pF at 3 V Reverse Bias
Spectral Range = 700 nm to 1150 nm
Peak Spectral Response = 925 nm
Sensitivity at peak Wavelength = Typical 0.55 A/W
Angular Response = ±20 Degrees at 50 % Response