C30737MH-500-80N - Si APD, 500um, LLC, 800nm enhanced
The C30737MH-500-80N Silicon Avalanche Photodiode (APD) provides an active diameter of 500 µm with enhanced 800 nm response in a leadless laminated carrier (LLC).
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise times at all wavelengths with a frequency response above 1.3 GHz
- Active diameter of 500μm and optimized for 800 nm peak sensitivity
- Leadless Laminated Carrier option "MH"
Applications:
- LiDAR
- Laser-range finding
- Security scanning
- Applications requiring a low-cost, high-performing detector
Active Diameter: 500μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 120-210 (binning available)
Temperature Coefficient of Vop for Constant M: 0.5 V/°C
Gain: 100 @800nm
Responsivity: 50 A/W at 800 nm
Dark Current Id: 0.1 <1 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 2 pF
Rise/Fall Time: 0.3 ns R load = 50Ω
Cut-off Frequency: 1.3 GHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: 2x1.75mm Top looking FR4 epoxy, leadless laminated carrier (LLC)
Active Diameter: 500μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 120-210 (binning available)
Temperature Coefficient of Vop for Constant M: 0.5 V/°C
Gain: 100 @800nm
Responsivity: 50 A/W at 800 nm
Dark Current Id: 0.1 <1 nA
Noise Current: 0.1 pA/√Hz
Capacitance: 2 pF
Rise/Fall Time: 0.3 ns R load = 50Ω
Cut-off Frequency: 1.3 GHz
Storage Temp: -50°C to +100°C
Operating Temp: -40°C to +85°C
Package: 2x1.75mm Top looking FR4 epoxy, leadless laminated carrier (LLC)