C30737CH-300-70 - Si APD, 300um, LLC side-looking
The C30737CH-300-70 Silicon Avalanche Photodiode (Si APD) provides a 300 µm active diameter with enhanced 800 nm response in a leadless laminated carrier (LCC).
Key Features:
- High responsivity between 500 and 1000 nm
- Low noise and extremely fast rise time at all wavelengths with a frequency response above 700 MHz
- Active diameter of 300μm and optimized for 800nm response
- Leadless laminated carrier with option "CH"
Applications:
- Laser-range finding
- Distance meters
- Area and security scanning
- Applications requiring a low-cost, high-performing detector
Active Diameter: 300μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 110-160
Gain: 100 @ 800 nm
Responsivity: 35A/W at 635 nm
Dark Current: 1 nA
Noise Current: 0.2 pA/√Hz
Capacitance: 0.7 pF
Cut-off frequency: 700 MHz
Storage Temp: -20°C to +70°C
Operating Temp: -10°C to +50°C
Package: 2x4mm FR4 Epoxy side looking Leadless Laminated Carrier
Active Diameter: 300μm
Peak Sensitivity Wavelength: 800 nm
Breakdown Voltage Vbd: 110-160
Gain: 100 @ 800 nm
Responsivity: 35A/W at 635 nm
Dark Current: 1 nA
Noise Current: 0.2 pA/√Hz
Capacitance: 0.7 pF
Cut-off frequency: 700 MHz
Storage Temp: -20°C to +70°C
Operating Temp: -10°C to +50°C
Package: 2x4mm FR4 Epoxy side looking Leadless Laminated Carrier