PART/ C30822EH
C30822EH - Si PIN Photodiode - 5mm
The C30822EH is a Silicon PIN Photodiode with a 5.0 mm active diameter chip in a hermetically-sealed TO-8 package designed for the 300 nm to 1100 nm wavelength range. This product series features a broad range of photosensitive surface areas from 0.8 mm² to 100 mm².
Features & Benefits:
- Silicon (Si) PIN photodiode
- TO-8 hermetically-sealed package
- 5.0 mm active diameter chip
- Anti-reflection coated to enhance responsivity at 900 nm
- High responsivity
- Fast response time
- Low operating voltage
- Low capacitance
- Hermetically sealed packages
- RoHS Compliant
Applications:
- Laser detection systems
- Photometry
- Data transmission
- Instrumentation
- High speed switching
| Breakdown Voltage | >100 V |
| Capacitance | 12 pF |
| Dark Current | 50nA/<250 nA |
| Noise Current | 130 fW/√Hz |
| Peak Wavelength | 900 nm |
| Responsivity | 0.6 A/W, at 900 nm |
| Rise/Fall Time | <20/<20 ns |
| Breakdown Voltage | >100 V |
| Capacitance | 12 pF |
| Dark Current | 50nA/<250 nA |
| Noise Current | 130 fW/√Hz |
| Peak Wavelength | 900 nm |
| Responsivity | 0.6 A/W, at 900 nm |
| Rise/Fall Time | <20/<20 ns |