PART/ DPGAS1S09H
DPGAS1S09H - 905nm Dual-Cavity 9 mils PLD
The DPGAS1S09H is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, single cavity chip with a 225 µm stripe width. It provides 50 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.
This is a multi-cavity 905 nm pulsed laser diode in metal packaging for advanced range finding applications.
We offer a broad range of 905 nm lasers including multi-cavity monolithic structures with up to four active cavities per chip. This results in up to 100 W of peak optical output power. Physically stacking of up to three laser chips results in up to 300 W of peak optical power.
- • 905 nm pulsed laser
- • DPGA series: Double cavity chip series
- • Range of single chip and stacked devices
- • Multi cavity lasers concentrate emitting source size
- • Quantum well structure
- • High peak pulsed power
- • Excellent power stability with temperature
- • 905 nm pulsed laser
- • DPGA series: Double cavity chip series
- • Range of single chip and stacked devices
- • Multi cavity lasers concentrate emitting source size
- • Quantum well structure
- • High peak pulsed power
- • Excellent power stability with temperature