PART/ VTP8440H

VTP8440H - Si PD, Ceramic, 5.16 mm2

The VTP8440H is a silicon photodiode on 8 mm ceramic substrate coated with epoxy. With a wide field-of-view, this photodiode produces a fast response and a low dark current.

  • Active area = 5.16 mm2 active area
  • Short Circuit Current = Minimum 30 µA at 100 fc, 2850 K
  • Responsivity = Typical 0.025 A/(W/cm2), 940 nm
  • Dark Current = Maximum 15 nA at 50 V Reverse Bias
  • Junction Capacitance = Maximum 15 pF at 15 V Reverse Bias
  • Spectral Range = 400 nm to 1150 nm
  • Peak Spectral Response = 925 nm
  • Sensitivity at Peak Wavelength = Typical 0.55 A/W
  • Angular Response = ±50 Degrees at 50 % Response
  • Active area = 5.16 mm2 active area
  • Short Circuit Current = Minimum 30 µA at 100 fc, 2850 K
  • Responsivity = Typical 0.025 A/(W/cm2), 940 nm
  • Dark Current = Maximum 15 nA at 50 V Reverse Bias
  • Junction Capacitance = Maximum 15 pF at 15 V Reverse Bias
  • Spectral Range = 400 nm to 1150 nm
  • Peak Spectral Response = 925 nm
  • Sensitivity at Peak Wavelength = Typical 0.55 A/W
  • Angular Response = ±50 Degrees at 50 % Response
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